Microchip Technology, Inc. MOSFET DN3545N3-G P002

The DN3545N3-G is a normally-on, N-channel depletion-mode vertical DMOS FET in a TO-92 package, designed for switching and amplifying applications requiring high breakdown voltage, high input impedance, and low input capacitance. It has a drain-to-source breakdown voltage of 450 V, a maximum continuous drain current of 136 mA, and a static drain-to-source on-state resistance of 20 Ω at a gate-source voltage of 0 V and a drain current of 150 mA. The device operates over a temperature range of -55°C to +150°C and is RoHS compliant. The part features a positive temperature coefficient and is free from thermal runaway and secondary breakdown.