The MD1812 is a high-speed quad-MOSFET driver designed to drive two P-channel and two N-channel high-voltage MOSFETs for medical ultrasound and other capacitive load applications. It features a 16-lead QFN package and supports input logic levels from 1.8V to 5V with a smart logic threshold. The device provides 2A peak source and sink currents, with outputs capable of swinging below ground and independently set high and low levels via separate supply pins VH and VL. It includes a built-in level translator for negative gate bias, an output enable pin that sets input threshold and disables outputs when low, and matched channels with 6ns rise and fall times. The auxiliary output OUTG drives an external PMOS with a 2kΩ series resistor for user-defined damping and return-to-zero pulsing.
MD1812 is a high-speed quad MOSFET driver. It is designed to drive two N and two P-channel high voltage DMOS FETs for medical ultrasound applications, but may be used in any application that needs a high output current for a capacitive load. The input stage of the MD1812 is a high-speed level translator that is able to operate from logic input signals of 1.8 to 5.0V amplitude. An adaptive threshold circuit is used to set the level translator threshold to the average of the input logic 0 and logic 1 levels. The level translator uses a proprietary circuit which provides DC coupling together with high-speed operation. The output stage of the MD1812 has separate power connections enabling the output signal L and H levels to be chosen independently from the driver supply voltages. As an example, the input logic levels may be 0V and 1.8V, the control logic may be powered by +5V and –5V, and the output L and H levels may be varied anywhere over the range of -5.0 to +5.0V. The output stage is capable of peak currents of up to ±2.0 amps depending on the supply voltages used and load capacitance. The OE pin serves a dual purpose. First, its logic H level is used to compute the threshold voltage level for the channel input level translators. Secondly, when OE is low, the outputs are disabled, with the A and C outputs high and the B and D outputs low. This assists in properly pre-charging the coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS. A built-in level shifter provides PMOS gate negative bias drive. This enables the user-defined damping control to generate return-to-zero bipolar output pulses.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MD1812 |
| Product Name | High Speed QUAD MOSFET Driver |