Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APTM50HM75SCTG

Description
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance: Symmetrical design Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Switched mode power supplies Uninterruptible power supplies Motor control
Request a Quote Datasheet
Description
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance: Symmetrical design Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Switched mode power supplies Uninterruptible power supplies Motor control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide/Silicon Hybrid Modules - APTM50HM75SCTG - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTM50HM75SCTG
Silicon Carbide/Silicon Hybrid Modules APTM50HM75SCTG
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance: Symmetrical design Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Switched mode power supplies Uninterruptible power supplies Motor control

Features

  • Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated
  • SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Very low stray inductance: Symmetrical design
  • Lead frames for power connections
  • High level of integration
  • Internal thermistor for temperature monitoring

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low Profile
  • RoHS compliant

Applications

  • Switched mode power supplies
  • Uninterruptible power supplies
  • Motor control
Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTM50HM75SCTG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTM50HM75SCTG
MOSFET 4N-CH 500V 46A SP4

MOSFET 4N-CH 500V 46A SP4

Supplier's Site

Technical Specifications

  Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number APTM50HM75SCTG APTM50HM75SCTG
Product Name Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Technology / Material Silicon Carbide
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - UJ3C120080K3S - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material SiCFET (Cascode SiCJFET)
V(BR)DSS 1200 volts
View Details
4 suppliers
Single FETs, MOSFETs - AUIRFS4127TRL - ODG (Origin Data Global)
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 200 volts
View Details
5 suppliers