Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3535N8-G DN3535N8-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 136129-DN3535N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 350V Continuous Drain Current at 25°C: 230mA (Tj) Max Input Capacitance: 360pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 Ohm @ 150mA, 0V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Microchip Technology Win Source Part Number: 136129-DN3535N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 350V Continuous Drain Current at 25°C: 230mA (Tj) Max Input Capacitance: 360pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 Ohm @ 150mA, 0V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3535N8-G - 136129-DN3535N8-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3535N8-G
136129-DN3535N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3535N8-G 136129-DN3535N8-G
Manufacturer: Microchip Technology Win Source Part Number: 136129-DN3535N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 0V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 350V Continuous Drain Current at 25°C: 230mA (Tj) Max Input Capacitance: 360pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 Ohm @ 150mA, 0V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 136129-DN3535N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 350V
Continuous Drain Current at 25°C: 230mA (Tj)
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 Ohm @ 150mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - DN3535N8-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN3535N8-GCT-ND
Single FETs, MOSFETs DN3535N8-GCT-ND
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - DN3535N8-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN3535N8-GDKR-ND
Single FETs, MOSFETs DN3535N8-GDKR-ND
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - DN3535N8-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
DN3535N8-GTR-ND
Single FETs, MOSFETs DN3535N8-GTR-ND
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - DN3535N8-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
DN3535N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs DN3535N8-G
MOSFET N-CH 350V 230MA TO243AA

MOSFET N-CH 350V 230MA TO243AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 350V 10Ohm

MOSFET 350V 10Ohm

Buy Now Datasheet
Mosfet, N Channel, 350V, 0.23A, Sot-89-3; Channel Type Microchip - 67X5083 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 350V, 0.23A, Sot-89-3; Channel Type Microchip
67X5083
Mosfet, N Channel, 350V, 0.23A, Sot-89-3; Channel Type Microchip 67X5083
MOSFET, N CHANNEL, 350V, 0.23A, SOT-89-3; Channel Type:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:230mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 350V, 0.23A, SOT-89-3; Channel Type:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:230mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 230 Ma, 350 V, 10 Ohm, 0 V Rohs Compliant Microchip - 87X8691 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 230 Ma, 350 V, 10 Ohm, 0 V Rohs Compliant Microchip
87X8691
Mosfet Transistor, N Channel, 230 Ma, 350 V, 10 Ohm, 0 V Rohs Compliant Microchip 87X8691
MOSFET Transistor, N Channel, 230 mA, 350 V, 10 ohm, 0 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 230 mA, 350 V, 10 ohm, 0 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 350V, 0.23A, To-243Aa-3; Transistor Polarity Microchip - 85X3189 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 350V, 0.23A, To-243Aa-3; Transistor Polarity Microchip
85X3189
Mosfet, N Channel, 350V, 0.23A, To-243Aa-3; Transistor Polarity Microchip 85X3189
MOSFET, N CHANNEL, 350V, 0.23A, TO-243AA-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:230mA; On Resistance Rds(on):10ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:0V RoHS Compliant: Yes

MOSFET, N CHANNEL, 350V, 0.23A, TO-243AA-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:230mA; On Resistance Rds(on):10ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:0V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 136129-DN3535N8-G DN3535N8-GCT-ND DN3535N8-G DN3535N8-G 67X5083 87X8691 85X3189
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3535N8-G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 350V, 0.23A, Sot-89-3; Channel Type Microchip Mosfet Transistor, N Channel, 230 Ma, 350 V, 10 Ohm, 0 V Rohs Compliant Microchip Mosfet, N Channel, 350V, 0.23A, To-243Aa-3; Transistor Polarity Microchip
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
MOSFET Operating Mode Depletion
V(BR)DSS 350 volts
PD 1600 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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