Manufacturer: Microchip Technology
Win Source Part Number: 136129-DN3535N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 350V
Continuous Drain Current at 25°C: 230mA (Tj)
Max Input Capacitance: 360pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 Ohm @ 150mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
MOSFET N-CH 350V 230MA TO243AA Product overview: DN3535N8-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 350V, 230MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 350V, 230MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DN3535N8-G can be used for catalog matching and distributor lookup.
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
N-Channel 350V 230mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)
MOSFET, N CHANNEL, 350V, 0.23A, SOT-89-3; Channel Type:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:230mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
MOSFET Transistor, N Channel, 230 mA, 350 V, 10 ohm, 0 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 350V, 0.23A, TO-243AA-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:230mA; On Resistance Rds(on):10ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:0V RoHS Compliant: Yes
MOSFET N-CH 350V 230MA TO243AA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 136129-DN3535N8-G | 278-DN3535N8-G | DN3535N8-GCT-ND | 67X5083 | 87X8691 | 85X3189 | DN3535N8-G | DN3535N8-G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3535N8-G | 350V 230MA MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N Channel, 350V, 0.23A, Sot-89-3; Channel Type Microchip | Mosfet Transistor, N Channel, 230 Ma, 350 V, 10 Ohm, 0 V Rohs Compliant Microchip | Mosfet, N Channel, 350V, 0.23A, To-243Aa-3; Transistor Polarity Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Depletion | Depletion | ||||||
| V(BR)DSS | 350 volts | 350 volts | ||||||
| PD | 1600 milliwatts | 1.6 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
