Microchip Technology, Inc. FET, MOSFET Arrays APTM100H45SCTG

Description
Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP4
  • FET, MOSFET Arrays - APTM100H45SCTG-ND - DigiKey
    DigiKey
  • Silicon Carbide/Silicon Hybrid Modules - APTM100H45SCTG - Richardson RFPD
    Richardson RFPD
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTM100H45SCTG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - APTM100H45SCTG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
APTM100H45SCTG-ND
FET, MOSFET Arrays APTM100H45SCTG-ND
Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP4

Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 18A 357W Chassis Mount SP4

Buy Now Datasheet
Silicon Carbide/Silicon Hybrid Modules - APTM100H45SCTG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide/Silicon Hybrid Modules
APTM100H45SCTG
Silicon Carbide/Silicon Hybrid Modules APTM100H45SCTG
Features Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance: Symmetrical design Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low Profile RoHS compliant Applications Switched mode power supplies Uninterruptible power supplies Motor control

Features

  • Power MOS 7 MOSFETs: Low RDS(on), Low Input and Miller capacitance, Low gate charge, Avalanche energy rated
  • SiC Parallel Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature independent switching behavior, Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Very low stray inductance: Symmetrical design
  • Lead frames for power connections
  • High level of integration
  • Internal thermistor for temperature monitoring

Benefits

  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low Profile
  • RoHS compliant

Applications

  • Switched mode power supplies
  • Uninterruptible power supplies
  • Motor control
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APTM100H45SCTG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APTM100H45SCTG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APTM100H45SCTG
MOSFET 4N-CH 1000V 18A SP4

MOSFET 4N-CH 1000V 18A SP4

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number APTM100H45SCTG-ND APTM100H45SCTG APTM100H45SCTG
Product Name FET, MOSFET Arrays Silicon Carbide/Silicon Hybrid Modules Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SP4 SP4
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