Microchip Technology, Inc. 3.0A Dual High-Speed Power MOSFET Driver with Enable MCP14E9

Description
The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in under 25 nsec (max).The inputs are TTL/CMOS compatiple and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity. Additional Features High peak output Current: 3A (typ) Independent Enable Function for each Driver Low Shoot-Through/Cross- Conduction Current in output Stage Wide input supply Operating Range: 4.5v to 18V High Capacitive Load drive Capability: 1800 pF in 20 nsec (typ) Short Delay Times: 40 nsec(typ) Matched rise/fall Times Low output Impedance: 2.2 Ohms (typ) Latch-up Protected: Will withstand 1.5A Reverse Current Input are TTL/CMOS compatiple and will withstand negativeswings Up To 5V ESD Protected: 4kV
Description
The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in under 25 nsec (max).The inputs are TTL/CMOS compatiple and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity. Additional Features High peak output Current: 3A (typ) Independent Enable Function for each Driver Low Shoot-Through/Cross- Conduction Current in output Stage Wide input supply Operating Range: 4.5v to 18V High Capacitive Load drive Capability: 1800 pF in 20 nsec (typ) Short Delay Times: 40 nsec(typ) Matched rise/fall Times Low output Impedance: 2.2 Ohms (typ) Latch-up Protected: Will withstand 1.5A Reverse Current Input are TTL/CMOS compatiple and will withstand negativeswings Up To 5V ESD Protected: 4kV
Datasheet
Datasheet Summary
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The MCP14E9 is a dual inverting high-speed MOSFET driver capable of sourcing and sinking 3.0A peak output current. It operates from a 4.5V to 18V single power supply and features an independent active-high enable function for each output. The device drives 1800pF loads with typical rise and fall times of 14ns and 17ns, and propagation delays of 45ns. It is available in 8-lead SOIC, PDIP, and 6x5 DFN packages, with the DFN package including an exposed thermal pad for improved heat dissipation. The operating temperature range is -40°C to +125°C, and the device is latch-up protected per JEDEC JESD78A with ESD protection up to 4kV HBM. Logic inputs withstand up to 5V negative swing and are compatible with TTL/CMOS levels.

Datasheet Summary
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The MCP14E9 is a dual inverting high-speed MOSFET driver capable of sourcing and sinking 3.0A peak output current. It operates from a 4.5V to 18V single power supply and features an independent active-high enable function for each output. The device drives 1800pF loads with typical rise and fall times of 14ns and 17ns, and propagation delays of 45ns. It is available in 8-lead SOIC, PDIP, and 6x5 DFN packages, with the DFN package including an exposed thermal pad for improved heat dissipation. The operating temperature range is -40°C to +125°C, and the device is latch-up protected per JEDEC JESD78A with ESD protection up to 4kV HBM. Logic inputs withstand up to 5V negative swing and are compatible with TTL/CMOS levels.

Suppliers

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Product
Description
Supplier Links
3.0A Dual High-Speed Power MOSFET Driver with Enable - MCP14E9 - Microchip Technology, Inc.
Chandler, AZ, United States
3.0A Dual High-Speed Power MOSFET Driver with Enable
MCP14E9
3.0A Dual High-Speed Power MOSFET Driver with Enable MCP14E9
The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in under 25 nsec (max).The inputs are TTL/CMOS compatiple and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity. Additional Features High peak output Current: 3A (typ) Independent Enable Function for each Driver Low Shoot-Through/Cross- Conduction Current in output Stage Wide input supply Operating Range: 4.5v to 18V High Capacitive Load drive Capability: 1800 pF in 20 nsec (typ) Short Delay Times: 40 nsec(typ) Matched rise/fall Times Low output Impedance: 2.2 Ohms (typ) Latch-up Protected: Will withstand 1.5A Reverse Current Input are TTL/CMOS compatiple and will withstand negativeswings Up To 5V ESD Protected: 4kV

The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in under 25 nsec (max).The inputs are TTL/CMOS compatiple and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity.

Additional Features

    • High peak output Current: 3A (typ)
    • Independent Enable Function for each Driver
    • Low Shoot-Through/Cross-Conduction Current in output Stage
    • Wide input supply Operating Range: 4.5v to 18V
    • High Capacitive Load drive Capability:
      • 1800 pF in 20 nsec (typ)
    • Short Delay Times: 40 nsec(typ)
    • Matched rise/fall Times
    • Low output Impedance: 2.2 Ohms (typ)
    • Latch-up Protected: Will withstand 1.5A Reverse Current
    • Input are TTL/CMOS compatiple and will withstand negativeswings Up To 5V
    • ESD Protected: 4kV
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MCP14E9
Product Name 3.0A Dual High-Speed Power MOSFET Driver with Enable
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