MOSFET N-CH 350V 72MA SOT23-3
N-Channel 350V 72mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
N-Channel 350V 72mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
N-Channel 350V 72mA (Tj) 360mW (Ta) Surface Mount SOT-23-3
Manufacturer: Microchip Technology
Win Source Part Number: 1033912-DN3135K1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 360mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 0V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 350V
Continuous Drain Current at 25°C: 72mA (Tj)
Max Input Capacitance: 120pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 35 Ohm @ 150mA, 0V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking
MOSFET N-CH 350V 72MA SOT23-3
MOSFET, N-CH, 350V, 0.072A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:72mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
MOSFET, N-CH, 350V, 0.072A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:350V; Continuous Drain Current Id:72mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:0V; Gate Source Threshold Voltage Max:- RoHS Compliant: Yes
MOSFET, N CH, 350V, 0.072A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:72mA; Drain Source Voltage Vds:350V; On Resistance Rds(on):35ohm; Rds(on) Test Voltage Vgs:0V; Threshold Voltage Vgs:-; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DN3135K1-G | 1655144 | 1656450P | DN3135K1-GCT-ND | 1033912-DN3135K1-G | DN3135K1-G | DN3135K1-G | 87X8687 | 95Y0124 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - DN3135K1-G | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 350V, 0.072A, Sot-23; Channel Type Microchip | Mosfet, N Ch, 350V, 0.072A, Sot-23-3; Transistor Polarity Microchip |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 350 volts | 350 volts | 350 volts | 350 volts | |||||
| IDSS | 72 milliamps | 72 milliamps | 72 milliamps | 72 milliamps | 72 milliamps | ||||
| PD | 360 milliwatts | 360 milliwatts |
