MOSFET N-CH 250V 1.1A TO252
MOSFET N-CH 250V 1.1A TO252 Product overview: DN2625K4-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 1.1A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 1.1A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-DN2625K4-G can be used for catalog matching and distributor lookup.
N-Channel 250V 1.1A (Tj) Surface Mount TO-252, (D-Pak)
N-Channel 250V 1.1A (Tj) Surface Mount TO-252, (D-Pak)
N-Channel 250V 1.1A (Tj) Surface Mount TO-252, (D-Pak)
MOSFET N-CH 250V 1.1A 3DPAK
MOSFET, N-CH, 250V, 1.1A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:250V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:0V; Threshold Voltage Vgs:-; Power Dissipation RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | DN2625K4-G | 278-DN2625K4-G | DN2625K4-GDKR-ND | 536-DN2625K4-G | DN2625K4-G | 57AC1828 |
| Product Name | Single FETs, MOSFETs | 250V 1.1A TO252 MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CH 250V 1.1A 3DPAK | MOSFET | Mosfet, N-Ch, 250V, 1.1A, To-252; Transistor Polarity Microchip |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 250 volts | 250 volts | 250 volts | |||
| IDSS | 1100 milliamps | 1100 milliamps | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
