Microchip Technology, Inc. 3.0A Dual High-Speed Power MOSFET Driver with Enable MCP14E10

Description
The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in under 25 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity. Additional Features High peak output Current: 3A (typ) Independent Enable Function for each Driver Low Shoot-Through/Cross- Conduction Current in output Stage Wide input supply Operating Range: 4.5v to 18V High Capacitive Load drive Capability: 1800 pF in 20nsec (typ) Short Delay Times: 75nsec(typ) Matched rise/fall Times Low output Impedance: 2.2Ω (typ) Latch-up Protected: Will withstand 1.5A Reverse Current Input are TTL/CMOS compatiple and will withstand negative swings Up To 5V ESD Protected: 4kV
Description
The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in under 25 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity. Additional Features High peak output Current: 3A (typ) Independent Enable Function for each Driver Low Shoot-Through/Cross- Conduction Current in output Stage Wide input supply Operating Range: 4.5v to 18V High Capacitive Load drive Capability: 1800 pF in 20nsec (typ) Short Delay Times: 75nsec(typ) Matched rise/fall Times Low output Impedance: 2.2Ω (typ) Latch-up Protected: Will withstand 1.5A Reverse Current Input are TTL/CMOS compatiple and will withstand negative swings Up To 5V ESD Protected: 4kV
Datasheet
Datasheet Summary
Powered by GS/AI

The MCP14E10 is a dual non-inverting 3.0A high-speed MOSFET driver with independent enable functions for each output, designed for switching applications requiring precise gate drive control. It operates from a 4.5V to 18V single power supply and can drive 1800pF capacitive loads with a typical rise time of 14ns and fall time of 17ns. Propagation delay is typically 45ns. The device is available in 8-lead SOIC, PDIP, and 6x5 DFN packages, with the DFN package featuring an exposed thermal pad for improved heat dissipation. It supports logic input levels from 3V to 18V, has latch-up protection per JEDEC JESD78A, and is rated for operation from -40°C to +125°C. All terminals are protected against 4kV HBM electrostatic discharge.

Datasheet Summary
Powered by GS/AI

The MCP14E10 is a dual non-inverting 3.0A high-speed MOSFET driver with independent enable functions for each output, designed for switching applications requiring precise gate drive control. It operates from a 4.5V to 18V single power supply and can drive 1800pF capacitive loads with a typical rise time of 14ns and fall time of 17ns. Propagation delay is typically 45ns. The device is available in 8-lead SOIC, PDIP, and 6x5 DFN packages, with the DFN package featuring an exposed thermal pad for improved heat dissipation. It supports logic input levels from 3V to 18V, has latch-up protection per JEDEC JESD78A, and is rated for operation from -40°C to +125°C. All terminals are protected against 4kV HBM electrostatic discharge.

Suppliers

Company
Product
Description
Supplier Links
3.0A Dual High-Speed Power MOSFET Driver with Enable - MCP14E10 - Microchip Technology, Inc.
Chandler, AZ, United States
3.0A Dual High-Speed Power MOSFET Driver with Enable
MCP14E10
3.0A Dual High-Speed Power MOSFET Driver with Enable MCP14E10
The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in under 25 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity. Additional Features High peak output Current: 3A (typ) Independent Enable Function for each Driver Low Shoot-Through/Cross- Conduction Current in output Stage Wide input supply Operating Range: 4.5v to 18V High Capacitive Load drive Capability: 1800 pF in 20nsec (typ) Short Delay Times: 75nsec(typ) Matched rise/fall Times Low output Impedance: 2.2Ω (typ) Latch-up Protected: Will withstand 1.5A Reverse Current Input are TTL/CMOS compatiple and will withstand negative swings Up To 5V ESD Protected: 4kV

The MCP14E9/E10/E11 devices are a family of 3A,dual output buffers/MOSFET drivers with seperate enable functions for each output. As MOSFET drivers, the MCP14E9/E10/E11 can charge 1800 pF gate capacitance in under 25 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low input levels that allows it to be driven from slow rising and falling signals and provide noise immunity.

Additional Features

    • High peak output Current: 3A (typ)
    • Independent Enable Function for each Driver
    • Low Shoot-Through/Cross-Conduction Current in output Stage
    • Wide input supply Operating Range: 4.5v to 18V
    • High Capacitive Load drive Capability: 1800 pF in 20nsec (typ)
    • Short Delay Times: 75nsec(typ)
    • Matched rise/fall Times
    • Low output Impedance: 2.2Ω (typ)
    • Latch-up Protected: Will withstand 1.5A Reverse Current
    • Input are TTL/CMOS compatiple and will withstand negative swings Up To 5V
    • ESD Protected: 4kV
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MCP14E10
Product Name 3.0A Dual High-Speed Power MOSFET Driver with Enable
Unlock Full Specs
to access all available technical data