Microchip Technology, Inc. MOSFET LP0701N3-G P014

The LP0701N3-G is a P-channel enhancement-mode lateral MOSFET in a TO-92 package, designed for low-voltage battery-operated applications such as solid-state relays and analog switches. It has a drain-to-source breakdown voltage of -16.5 V, a gate threshold voltage range of -0.5 V to -1.0 V, and a maximum continuous drain current of -500 mA. The device features a drain-to-source on-resistance of up to 2.0 Ω at -3.0 V gate-source voltage and exhibits a negative temperature coefficient for threshold voltage of -4.0 mV/°C. It is RoHS compliant and operates over a temperature range of -55°C to +150°C. The TO-92 package has a maximum power dissipation of 1.0 W at 25°C case temperature.