Rochester Electronics Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| 40 V, 200 mA NPN switching transistor | |
| 50V Dual NPN Bipolar Digital Transistor | |
| 6.0 A, 100 V PNP Bipolar Power Transistor | |
| 80 V, 100 mA PNP resistor-equipped transistors | |
| Dual NPN Bipolar Digital Transistor (BRT) | |
| Dual PNP Bipolar Digital Transistor (BRT) | |
| High Voltage NPN Bipolar Transistor | |
| MJD45H11 - 8 A, 80 V PNP Power Bipolar Junction Transistor | |
| MPSA29 - NPN Bipolar Junction Darlington Transistor | |
| MRF085H - Wideband RF Power LDMOS Transistor, 85W | |
| MRF1K50 - RF Power LDMOS Transistor | |
| MRF24300 - RF Power LDMOS Transistor | |
| MRF24301 - RF Power LDMOS Transistor, 2450 MHz, 300 W CW, 32 V | |
| MRF24G300 - RF Power GaN Transistor, 300 W CW over 2400-2500 MHz, 50 V | |
| MRF6V13250HS - Lateral N-Channel RF Power MOSFET | |
| MRF6V14300 - RF N-Channel, MOSFET | |
| MRF8P9040 - CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V | |
| MRF8P9210 - Single W-CDMA RF Power LDMOS Transistor, 920-960 MHz, 63 W Avg., 28 V | |
| MRF8S9200 - Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V | |
| MRF8S9232 - Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 63 W Avg., 28 V | |
| MRF8VP13350GN - RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V | |
| MRFE6VP6600GN - Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 600 W CW, 50 V | |
| MUN5234 - NPN Bipolar Digital Transistor (BRT) | |
| MUN5234DW1 - Dual NPN Bipolar Digital Transistor (BRT) | |
| MX0912B351Y - NPN Silicon RF Power Transistor | |
| NE5550979 - RF Power Field-Effect Transistor, N-Channel MOSFET, N-Channel MOSFET | |
| NHDTA114ET - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA114EU - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA114YT - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA114YU - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA123JT - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA123JU - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA124ET - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA124EU - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA143ZT - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA143ZU - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA144ET - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTA144EU - 80 V, 100 mA PNP resistor-equipped transistors | |
| NHDTC114ET - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC114EU - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC114YT - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC114YU - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC123JT - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC123JU - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC124ET - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC143ZU - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC144ET - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHDTC144EU - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHUMB1 - 80 V, 100 mA PNP/PNP resistor-equipped double transistors | |
| NHUMB10 - 80 V, 100 mA PNP/PNP resistor-equipped double transistors | |
| NHUMB11 - 80 V, 100 mA PNP/PNP resistor-equipped double transistors | |
| NHUMB13 - 80 V, 100 mA PNP/PNP resistor-equipped double transistors | |
| NHUMB2 - 80 V, 100 mA PNP/PNP resistor-equipped double transistors | |
| NHUMB9 - 80 V, 100 mA PNP/PNP resistor-equipped double transistors | |
| NHUMD10 - 80 V, 100 mA NPN/PNP resistor-equipped double transistors | |
| NHUMD12 - 80 V, 100 mA NPN/PNP resistor-equipped double transistors | |
| NHUMD13 - 80 V, 100 mA NPN/PNP resistor-equipped double transistors | |
| NHUMD2 - 80 V, 100 mA NPN/PNP resistor-equipped double transistors | |
| NHUMH1 - 80 V, 100 mA NPN/NPN resistor-equipped double transistors | |
| NHUMH10 - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHUMH11 - 80 V, 100 mA NPN/NPN resistor-equipped double transistors | |
| NHUMH13 - 80 V, 100 mA NPN resistor-equipped transistors | |
| NHUMH2 - 80 V, 100 mA NPN/NPN resistor-equipped double transistors | |
| NHUMH9 - 80 V, 100 mA NPN resistor-equipped transistors | |
| NMB2227A - 40 V, 600 mA NPN/PNP general-purpose transistors | |
| NPN Bipolar Digital Transistor (BRT) | |
| NPN Bipolar Transistor | |
| NPN microwave power transistor | |
| NPN PNP Bipolar Transistor | |
| PNP Bipolar Digital Transistor (BRT) | |
| PNP Bipolar Small Signal Transistor | |
| PNP Bipolar Transistor | |
| PNP Transistor with Dual Series Switching Diode | |
| Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V | |
| RF L Band, N-Channel Power MOSFET, TO-272 | |
| RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2-Element, S Band, N-Channel MOSFET | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, MOSFET | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270 | |
| RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor, 2.62Ghz, NI-780, MOSFET | |
| RF Power Field-Effect Transistor, N-Channel Enhancement Mode Lateral MOSFET | |
| RF Power Field-Effect Transistor, N-Channel MOSFET | |
| RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
| RF Power Field-Effect Transistor | |
| RF S Band, N-Channel Power MOSFET | |
| RF Small Signal Bipolar Transistor, 0.03A, NPN | |
| RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | |
| RF Small Signal Bipolar Transistor, 0.2A, NPN | |
| RF Small Signal Bipolar Transistor, 0.4A, NPN | |
| RF Small Signal Bipolar Transistor, 1-Element, NPN | |
| RF Small Signal Bipolar Transistor | |
| RF Small Signal Field-Effect Transistor, 1-Elemen | |
| RF Small Signal Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | |
| RF Small Signal Field-Effect Transistor, K Band, Gallium Arsenide, N-Channel, Hetero-junction FET | |
| RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | |
| RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET | |
| RF Small Signal Field-Effect Transistor, S Band, Gallium Arsenide, N-Channel JFET | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET, TO-270 | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET, TO-272 | |
| RF Ultra High Frequency Band, N-Channel Power MOSFET | |
| Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 24 W Avg, 28 V | |
| Small Signal Bipolar Transistor, 0.03A, 20V, NPN | |
| Small Signal Bipolar Transistor, 0.15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.15A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.1A, 50V, 2-Element, NPN and PNP | |
| Small Signal Bipolar Transistor, 0.1A, 50V, NPN | |
| Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
| Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
| Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon | |
| Small Signal Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
| Small Signal Bipolar Transistor, NPN, TO-236AB | |
| Wideband RF Power LDMOS Transistor, 1.8-600 MHz, 1250 W CW, 50 V | |
| Wideband RF Power LDMOS Transistor |
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