onsemi Bipolar Transistor Arrays NST65011MW6T1G

Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
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Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - NST65011MW6T1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NST65011MW6T1GOSCT-ND
Bipolar Transistor Arrays NST65011MW6T1GOSCT-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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Bipolar Transistor Arrays - NST65011MW6T1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NST65011MW6T1GOSTR-ND
Bipolar Transistor Arrays NST65011MW6T1GOSTR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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Bipolar Transistor Arrays - NST65011MW6T1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
NST65011MW6T1GOSDKR-ND
Bipolar Transistor Arrays NST65011MW6T1GOSDKR-ND
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 1325088-NST65011MW6T1G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
1325088-NST65011MW6T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 1325088-NST65011MW6T1G
Manufacturer: onsemi Win Source Part Number: 1325088-NST65011MW6T 1G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount Power - Max: 380mW Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 NPN (Dual) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: 6-TSSOP, SC-88, SOT-363 ECCN: EAR99 Fake Threat In the Open Market: 77 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Other Part Number: NST65011MW6T1GOSCT,O NSONSNST65011MW6T1G, NST65011MW6T1GOSDKR, NST65011MW6T1GOSTR,2 156-NST65011MW6T1G-O S Base Product Number: NST65011 RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1325088-NST65011MW6T1G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Power - Max: 380mW
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: 6-TSSOP, SC-88, SOT-363
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: NST65011MW6T1GOSCT,ONSONSNST65011MW6T1G,NST65011MW6T1GOSDKR,NST65011MW6T1GOSTR,2156-NST65011MW6T1G-OS
Base Product Number: NST65011
RoHS Status: ROHS3 Compliant

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 - NST65011MW6T1G - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon

Supplier's Site Datasheet
Singapore
Dual 65V Bipolar Transistor
277-NST65011MW6T1G
Dual 65V Bipolar Transistor 277-NST65011MW6T1G
DUAL MATCHED NPN XSTR 65V, 3000-REEL Product overview: NST65011MW6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NST65011MW6T1G can be used for catalog matching and distributor lookup.

DUAL MATCHED NPN XSTR 65V, 3000-REEL Product overview: NST65011MW6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 65V. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 65V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-NST65011MW6T1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NST65011MW6T1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NST65011MW6T1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NST65011MW6T1G
TRANS 2NPN 65V 0.1A SC88

TRANS 2NPN 65V 0.1A SC88

Supplier's Site
Trans, Dual Npn, 65V, Sot-363-6; Transistor Polarity Onsemi - 75Y1886 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Dual Npn, 65V, Sot-363-6; Transistor Polarity Onsemi
75Y1886
Trans, Dual Npn, 65V, Sot-363-6; Transistor Polarity Onsemi 75Y1886
TRANS, DUAL NPN, 65V, SOT-363-6; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:0.9hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

TRANS, DUAL NPN, 65V, SOT-363-6; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:65V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:0.9hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
NST65011MW6T1G
Bipolar Transistors - BJT NST65011MW6T1G
Bipolar Transistors - BJT Dual MatchedNPN Tra

Bipolar Transistors - BJT Dual MatchedNPN Tra

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Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number NST65011MW6T1GOSCT-ND 1325088-NST65011MW6T1G NST65011MW6T1G 277-NST65011MW6T1G NST65011MW6T1G 75Y1886 NST65011MW6T1G
Product Name Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays Dual 65V Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans, Dual Npn, 65V, Sot-363-6; Transistor Polarity Onsemi Bipolar Transistors - BJT
Polarity NPN NPN NPN NPN
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; 6-TSSOP, SC-88, SOT-363 SC-88-6-EUT-CPR TO-3; SOT3
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
Power Gain 200 dB
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