The NJV4030PT1G is a PNP silicon bipolar transistor designed for general-purpose switching and amplification applications. It is packaged in a SOT-223 (TO-261AA) surface-mount case with dimensions conforming to case 318E-04. The device has a continuous collector current rating of 3.0 A, a collector-emitter voltage rating of 40 V, and a total power dissipation of 0.80 W when mounted on a 0.012" sq. collector pad. It is AEC-Q101 qualified and PPAP capable, meeting automotive reliability standards. The transistor is Pb-free, halogen-free, BFR-free, and RoHS compliant. Its junction temperature range is -55°C to +150°C, and it has a current-gain bandwidth product (fT) of 160 MHz at IC = 500 mA and VCE = 10 V. The collector-emitter saturation voltage is 0.500 V maximum at IC = 3.0 A and IB = 0.3 A. The device meets UL 94 V-0 for flammability.
Manufacturer: ON Semiconductor
Win Source Part Number: 887340-NJV4030PT1G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Bipolar (BJT) Transistor PNP 40 V 3 A 160MHz 2 W Surface Mount SOT-223 (TO-261)
Package: Bulk
Package: TO-261-4, TO-261AA
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: SOT-223 (TO-261)
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 887340-NJV4030PT1G |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - NJV4030PT1G |
| Polarity | PNP |
