Rochester Electronics TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBA124EDXV6T1G NSBA124EDXV6T1G

The NSBA124EDXV6 is a dual PNP bias resistor transistor in a SOT-563 package, integrating two transistors with monolithic 22 kΩ bias resistor networks to reduce component count and board space. It has a continuous collector current rating of 100 mA, a collector-emitter voltage rating of 50 V, and a total device dissipation of 500 mW under both junctions heated with an FR-4 PCB using a 500 mm², 1 oz copper trace. The device is AEC-Q101 qualified and PPAP capable, and meets RoHS standards. The input resistor ratio R1/R2 is between 0.8 and 1.2, and the typical DC current gain is 100 at 5 mA collector current. The junction and storage temperature range is -55°C to +150°C.