onsemi NSF2250WT1G

The NSF2250WT1G is an NPN silicon epitaxial bipolar transistor for UHF oscillator and mixer applications, housed in a SOT-323 package. It features a minimum gain-bandwidth product of 2.0 GHz, a DC current gain (hFE) range of 120 to 250, and a typical feedback capacitance of 0.45 pF. Maximum collector-to-emitter voltage is 15 V, with a collector current rating of 50 mA and total device dissipation of 202 mW at 25°C ambient temperature. The device is Pb-free and meets ESD ratings of HBM Class 1C and MM Class A. Junction and storage temperature range is -55°C to +150°C.