Dual NPN Bipolar Digital Transistor (BRT)
Dual NPN Bipolar Digital Transistor (BRT), SOT-563, 6 LEAD, 4000-REEL Product overview: NSBC115EDXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBC115EDXV6T1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Manufacturer: ON Semiconductor
Win Source Part Number: 1083611-NSBC115EDXV6
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): 100k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-563
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
TRANS PREBIAS 2NPN 50V SOT563
BRT TRANSISTOR, 50V 100K/100KOHM, SOT563, FULL REEL; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:100kohm; RF Transistor Case:SOT-563 RoHS Compliant: Yes
BRT TRANSISTOR, 50V, 100K/100K, SOT563; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:100kohm; Base-Emitter Resistor R2:100kohm RoHS Compliant: Yes
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors |
| Product Number | NSBC115EDXV6T1G | 293-NSBC115EDXV6T1G | 488-NSBC115EDXV6T1GCT-ND | 1083611-NSBC115EDXV6T1G | NSBC115EDXV6T1G | NSBC115EDXV6T1G | 42K2331 | 49X8960 |
| Product Name | Dual Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC115EDXV6T1G | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Brt Transistor, 50V 100K/100Kohm, Sot563, Full Reel; Digital Transistor Polarity Onsemi | Brt Transistor, 50V, 100K/100K, Sot563; Digital Transistor Polarity Onsemi | |
| Polarity | NPN | NPN | NPN | NPN; 2 NPN - Pre-Biased (Dual) | ||||
| Package Type | SOT-563, 6 LEAD | SOT-563, SOT-666 | SOT3; SOT-563 | SOT-563 | TO-3 | TO-3 | ||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| IC(max) | 100 milliamps | 100 milliamps |
