onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T5 NSBC114EPDXV6T5

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NSBC114EPDXV6T5 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T5 - 209311-NSBC114EPDXV6T5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T5
209311-NSBC114EPDXV6T5
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T5 209311-NSBC114EPDXV6T5
Manufacturer: ON Semiconductor Win Source Part Number: 209311-NSBC114EPDXV6 T5 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-563 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 500mW Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 209311-NSBC114EPDXV6T5
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-563
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
Dual 100mA 50V 463A Bipolar Transistor
293-NSBC114EPDXV6T5
Dual 100mA 50V 463A Bipolar Transistor 293-NSBC114EPDXV6T5
100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN Product overview: NSBC114EPDXV6T5 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100mA, 50V, 463A. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 100mA, 50V, 463A, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBC114EPDXV6T5 can be used for catalog matching and distributor lookup.

100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN Product overview: NSBC114EPDXV6T5 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100mA, 50V, 463A. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 100mA, 50V, 463A, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBC114EPDXV6T5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NSBC114EPDXV6T5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NSBC114EPDXV6T5
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NSBC114EPDXV6T5
SMALL SIGNAL BIPOLAR TRANSISTOR

SMALL SIGNAL BIPOLAR TRANSISTOR

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number NSBC114EPDXV6T5 209311-NSBC114EPDXV6T5 293-NSBC114EPDXV6T5 NSBC114EPDXV6T5
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EPDXV6T5 Dual 100mA 50V 463A Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual) PNP
Package Type FL6 SOT3; SOT-563
Packing Method Tape Reel; Tape & Reel Bulk; Bulk
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