Rochester Electronics TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBA115EDXV6T1G NSBA115EDXV6T1G

The NSBA115EDXV6 is a dual PNP bias resistor transistor in a SOT-563 package, designed to replace discrete transistors and bias resistors, reducing component count and board space. The device features integrated base resistors R1 and R2, both nominally 100 kΩ, with a ratio tolerance of 0.8 to 1.2. It has a collector-emitter voltage rating of 50 V, continuous collector current of 100 mA, and a total device dissipation of 500 mW when both junctions are heated. The junction and storage temperature range is -55°C to +150°C. The part is RoHS compliant, Pb-free, halogen-free, AEC-Q101 qualified, and PPAP capable. The SOT-563 package dimensions are 1.50 to 1.70 mm in length, 1.10 to 1.30 mm in width, and 0.50 mm pitch between pins.