onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC113EPDXV6T1G NSBC113EPDXV6T1G

Manufacturer: ON Semiconductor
Win Source Part Number: 790825-NSBC113EPDXV6T1G
Packaging: Reel package
Package: SOT-563, SOT-666
Mounting: SMD
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Family Name: NSBC113EPDXV6
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-563
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Maximum): 500nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 3 @ 5mA, 10V
Alternative Parts (Cross-Reference): NSBC113EPDXV6T5G ;
Introduction Date: November 01, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

50V Dual Bipolar Digital Transistor, SOT-563, 6 LEAD, 4000-REEL Product overview: NSBC113EPDXV6T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBC113EPDXV6T1G can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT)

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon