Rochester Electronics TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC123JPDXV6T5 NSBC123JPDXV6T5

The NSBC114EPDXV6T1 and NSBC114EPDXV6T5 are dual bias resistor transistors, integrating NPN and PNP silicon transistors with monolithic bias networks in a single SOT-563 package measuring 1.70 mm x 1.30 mm x 0.50 mm. Each device features a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, and maximum collector current of 100 mA. Total device dissipation is 357 mW for one junction heated and 500 mW for both junctions heated, with a thermal resistance of 250 °C/W when both junctions are heated. The package supports surface mount assembly and meets RoHS compliance with lead-free solder plating. The series is designed to reduce component count and board space in low-power applications.