onsemi NSBC143ZPDXV6T1

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
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Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Request a Quote
Datasheet
Datasheet Summary
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The NSBC143ZPDXV6T1 is a dual bias resistor transistor in a SOT-563 package, integrating NPN and PNP silicon transistors with monolithic bias networks. Each device contains a 4.7 kΩ base resistor and a 47 kΩ base-emitter resistor. It has a maximum collector-base voltage of 50 V, collector-emitter voltage of 50 V, and collector current of 100 mA. Total device dissipation is 500 mW at 25°C with a thermal resistance of 250 °C/W when both junctions are heated. The junction temperature range is -55°C to +150°C. It meets RoHS standards and is available in tape and reel packaging.

Datasheet Summary
Powered by GS/AI

The NSBC143ZPDXV6T1 is a dual bias resistor transistor in a SOT-563 package, integrating NPN and PNP silicon transistors with monolithic bias networks. Each device contains a 4.7 kΩ base resistor and a 47 kΩ base-emitter resistor. It has a maximum collector-base voltage of 50 V, collector-emitter voltage of 50 V, and collector current of 100 mA. Total device dissipation is 500 mW at 25°C with a thermal resistance of 250 °C/W when both junctions are heated. The junction temperature range is -55°C to +150°C. It meets RoHS standards and is available in tape and reel packaging.

Suppliers

Company
Product
Description
Supplier Links
 - NSBC143ZPDXV6T1 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number NSBC143ZPDXV6T1
Polarity NPN; PNP
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