onsemi NSBA115EDXV6T1

Dual PNP silicon surface mount transistors with integrated monolithic bias resistor networks, housed in the SOT-563 package measuring 1.60 mm x 1.30 mm x 0.75 mm. Each device features a 100 kΩ base resistor and a 100 kΩ base-emitter resistor. Maximum ratings include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total device dissipation of 500 mW when both junctions are heated. Thermal resistance junction-to-ambient is 250 °C/W. The device meets RoHS standards and is Pb-free. Operating junction and storage temperature range is -55 °C to +150 °C.