Nexperia B.V. 80 V, 100 mA NPN resistor-equipped transistors NHDTC144ETR

NPN Resistor-Equipped Transistor (RET) family in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Table 1. Product overview

Type number

-

R1

-

R2

-

Package

-

PNP complement:

kΩ

-

kΩ

-

Nexperia

NHDTC114ET

10

10

SOT23

NHDTA114ET

NHDTC124ET

22

22

NHDTA124ET

NHDTC144ET

47

47

NHDTA144ET

Features and benefits

• 100 mA output current capability
• High breakdown voltage
• Built-in resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs

Applications

• Digital applications
• Cost saving alternative for BC846 series in digital applications
• Controlling IC inputs
• Switching loads

NHDTC144ET - 80 V, 100 mA NPN resistor-equipped transistors

TRANS PREBIAS NPN 80V TO236AB Product overview: NHDTC144ETR from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NHDTC144ETR can be used for catalog matching and distributor lookup.

Win Source Part Number: 1377002-NHDTC144ETR
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Fake Threat In the Open Market: 38 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Base Product Number: NHDTC144
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 170 MHz
Power - Max: 250 mW

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 80V 100mA 170MHz 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 80V 100mA 170MHz 250mW Surface Mount TO-236AB

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 80V 100mA 170MHz 250mW Surface Mount TO-236AB