Rochester Electronics TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC143TPDXV6T1 NSBC143TPDXV6T1

The NSBC143TPDXV6T1 is a dual bias resistor transistor package containing one NPN and one PNP silicon transistor with monolithic bias networks, designed for surface mount applications requiring compact design and reduced component count. It is packaged in the SOT-563 case (463A), measuring 1.60 mm maximum height, with a 0.5 mm pitch between leads, suitable for high-density boards. Each transistor has a collector-base voltage rating of 50 V, collector-emitter voltage of 50 V, and maximum collector current of 100 mA. Total device dissipation is 500 mW at 25°C, derating at 4.0 mW/°C above this temperature. The input resistor R1 is 4.7 kΩ with R2 open-circuited, enabling high current gain with minimal base drive. The junction and storage temperature range is -55°C to +150°C. Thermal resistance junction-to-ambient is 250°C/W when both junctions are heated.