The NSBC114EDXV6T5G is a dual NPN bipolar junction transistor with integrated bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) in a SOT-563 surface mount package. It has a collector-emitter voltage rating of 50 V, a continuous collector current of 100 mA, and a maximum total device dissipation of 500 mW when both junctions are heated. The device is AEC-Q101 qualified and PPAP capable, operates within a junction and storage temperature range of -55°C to +150°C, and is Pb-free, halogen-free, and RoHS compliant.
Manufacturer: ON Semiconductor
Win Source Part Number: 887642-NSBC114EDXV6T
Features: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA - 500mW Surface Mount SOT-563
Package: Bulk
Package: SOT-563, SOT-666
Mounting: Surface Mount
Categories: Discrete Semiconductor Products
Case / Package: SOT-563
Popularity: Medium
Fake Threat In the Open Market: 95 pct.
Supply and Demand Status: Limited
Quantity per package: 1
| Win Source Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 887642-NSBC114EDXV6T5G |
| Product Name | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EDXV6T5G |
| Polarity | NPN |
