Rochester Electronics TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBC114EDXV6T5 NSBC114EDXV6T5

The NSBC114EDXV6T5 is a dual NPN bipolar junction transistor with integrated bias resistors in a SOT-563 surface-mount package, designed for low-power digital applications requiring compact component integration. Each transistor features a 10 kΩ base resistor and a 10 kΩ base-emitter resistor. The device is rated for a maximum collector-emitter voltage of 50 Vdc, collector current of 100 mAdc, and total device dissipation of 500 mW when both junctions are heated, with a thermal resistance of 250 °C/W. It meets Pb-free and RoHS standards and operates over a junction temperature range of −55 to +150 °C.