Rochester Electronics TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - NSBA143ZF3T5G NSBA143ZF3T5G

The NSBA143ZF3T5G is a PNP digital transistor with an integrated bias resistor network, designed to replace discrete transistor and resistor combinations, reducing component count and board space. It is packaged in a SOT-1123 surface-mount case and rated for a maximum collector current of 100 mA and collector-emitter voltage of 50 V. The device dissipates up to 254 mW at 25°C ambient temperature with a derating of 2.0 mW/°C, and has a junction temperature range of -55°C to +150°C. The internal resistor ratio R1/R2 is specified between 0.08 and 0.14, with R1 at 4.7 kΩ. It is AEC-Q101 qualified and meets RoHS compliance requirements. For thermal performance, the junction-to-ambient thermal resistance is 493 °C/W on a 100 mm² FR-4 PCB with 1 oz copper traces in still air.