Rochester Electronics TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBA123JDXV6T5 NSBA123JDXV6T5

The NSBA123JDXV6T5 is a dual PNP silicon surface mount transistor with an integrated monolithic bias resistor network, housed in the SOT-563 package. It features a collector current rating of -100 mA, a collector-emitter voltage rating of -50 V, and a total device dissipation of 500 mW at 25°C with both junctions heated. The device includes a 2.2 kΩ base resistor and a 47 kΩ base-emitter resistor, and meets RoHS standards. It supports thermal derating of 4.0 mW/°C above 25°C and has a junction temperature range of -55°C to +150°C. The SOT-563 package has dimensions of 1.60 mm maximum length and 1.20 mm maximum width. It is supplied in 8000-unit tape and reel packaging.