onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBA114YDXV6T1 NSBA114YDXV6T1

Manufacturer: ON Semiconductor
Win Source Part Number: 733156-NSBA114YDXV6T1
Packaging: Tape and Reel
Mounting Style: SMD
Transistor Type: 2 PNP - Pre-Biased (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-563
Status: Obsolete
Manufacturer Package: SOT-563, SOT-666
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Low
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Family Part Number: NSBA1*
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 80 at 5mA, 10V
Maximum Power: 500mW
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms

100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN Product overview: NSBA114YDXV6T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100mA, 50V, 463A. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 100mA, 50V, 463A, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBA114YDXV6T1 can be used for catalog matching and distributor lookup.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563