100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN Product overview: NSBA143TDXV6T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100mA, 50V, 463A. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 100mA, 50V, 463A, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-NSBA143TDXV6T1 can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
Manufacturer: ON Semiconductor
Win Source Part Number: 790824-NSBA143TDXV6T
Packaging: Reel package
Package: SOT-563, SOT-666
Mounting: SMD
Power - Max: 500mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Obsolete(EOL)
Family Name: NSBA143TDXV6
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-563
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Maximum): 500nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 160 @ 5mA, 10V
Alternative Parts (Cross-Reference): NSBA143TDXV6T1G; NSBA143TDXV6T5G; EMB3; UP04116;
Introduction Date: February 19, 2003
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
TRANS 2PNP PREBIAS 0.5W SOT563
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 293-NSBA143TDXV6T1 | NSBA143TDXV6TOSTR-ND | NSBA143TDXV6T1 | 790824-NSBA143TDXV6T1 | NSBA143TDXV6T1 |
| Product Name | Dual 100mA 50V 463A Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - NSBA143TDXV6T1 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | PNP | PNP | PNP | PNP | |
| IC(max) | 100 milliamps | 5.00E-4 milliamps | 100 milliamps | ||
| VCEO | 50 volts | 50 volts | |||
| PD | 500 milliwatts | ||||
| TJ | -55 C (-67 F) |
