onsemi TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - NSB9435T1G NSB9435T1G

Manufacturer: ON Semiconductor
Win Source Part Number: 1083601-NSB9435T1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 110MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-223
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 550mV @ 300mA, 3A
Typical Gain (hFE) (Min): 125 @ 800mA, 1V
Maximum Power Dissipation: 720mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

PNP Bipolar Digital Transistor (BRT)

TRANS PREBIAS PNP 30V 3A SOT223

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30V 3A 110MHz 720mW Surface Mount SOT-223 (TO-261)

PNP Bipolar Digital Transistor (BRT), SOT-223 (TO-261) 4 LEAD, 1000-REEL Product overview: NSB9435T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-NSB9435T1G can be used for catalog matching and distributor lookup.