Nexperia B.V. 80 V, 100 mA PNP/PNP resistor-equipped double transistors NHUMB10F

Description
PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN/NPN complement: - NPN/PNP complement: kΩ - kΩ - Nexperia - JEITA NHUMB10 2.2 47 SOT363 SC-88 NHUMH10 NHUMD10 NHUMB13 4.7 47 NHUMH13 NHUMD13 NHUMB9 10 47 NHUMH9 NHUMD9 Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Digital applications Cost saving alternative for BC856 series in digital applications Controlling IC inputs Switching loads
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Description
PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN/NPN complement: - NPN/PNP complement: kΩ - kΩ - Nexperia - JEITA NHUMB10 2.2 47 SOT363 SC-88 NHUMH10 NHUMD10 NHUMB13 4.7 47 NHUMH13 NHUMD13 NHUMB9 10 47 NHUMH9 NHUMD9 Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Digital applications Cost saving alternative for BC856 series in digital applications Controlling IC inputs Switching loads
Request a Quote
Datasheet
Datasheet Summary
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80 V, 100 mA PNP/PNP resistor-equipped double transistors in a SOT363 (SC-88) surface-mounted package, with built-in bias resistors to simplify circuit design and reduce component count. The device offers a collector-emitter voltage rating of -80 V, an output current capability of -100 mA, and a total power dissipation of up to 350 mW per device. It is AEC-Q101 qualified for automotive applications and operates over a junction temperature range up to 150 °C and ambient temperature range from -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

80 V, 100 mA PNP/PNP resistor-equipped double transistors in a SOT363 (SC-88) surface-mounted package, with built-in bias resistors to simplify circuit design and reduce component count. The device offers a collector-emitter voltage rating of -80 V, an output current capability of -100 mA, and a total power dissipation of up to 350 mW per device. It is AEC-Q101 qualified for automotive applications and operates over a junction temperature range up to 150 °C and ambient temperature range from -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
80 V, 100 mA PNP/PNP resistor-equipped double transistors - NHUMB10F - Nexperia B.V.
Nijmegen, Netherlands
80 V, 100 mA PNP/PNP resistor-equipped double transistors
NHUMB10F
80 V, 100 mA PNP/PNP resistor-equipped double transistors NHUMB10F
PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1.Product overview Type number - R1 - R2 - Package - NPN/NPN complement: - NPN/PNP complement: kΩ - kΩ - Nexperia - JEITA NHUMB10 2.2 47 SOT363 SC-88 NHUMH10 NHUMD10 NHUMB13 4.7 47 NHUMH13 NHUMD13 NHUMB9 10 47 NHUMH9 NHUMD9 Features and benefits 100 mA output current capability High breakdown voltage Built-in resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified Applications Digital applications Cost saving alternative for BC856 series in digital applications Controlling IC inputs Switching loads

PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

Table 1.Product overview

Type number

-

R1

-

R2

-

Package

-

NPN/NPN complement:

-

NPN/PNP complement:

kΩ

-

kΩ

-

Nexperia

-

JEITA

NHUMB10

2.2

47

SOT363

SC-88

NHUMH10

NHUMD10

NHUMB13

4.7

47

NHUMH13

NHUMD13

NHUMB9

10

47

NHUMH9

NHUMD9

Features and benefits

  • 100 mA output current capability
  • High breakdown voltage
  • Built-in resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • AEC-Q101 qualified

Applications

  • Digital applications
  • Cost saving alternative for BC856 series in digital applications
  • Controlling IC inputs
  • Switching loads
Supplier's Site Datasheet
 - NHUMB10F - Rochester Electronics
Newburyport, MA, United States
NHUMB10 - 80 V, 100 mA PNP/PNP resistor-equipped double transistors

NHUMB10 - 80 V, 100 mA PNP/PNP resistor-equipped double transistors

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-NHUMB10FCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-NHUMB10FCT-ND
Bipolar Transistor Arrays, Pre-Biased 1727-NHUMB10FCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 80V 100mA 150MHz 350mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 80V 100mA 150MHz 350mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-NHUMB10FDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-NHUMB10FDKR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-NHUMB10FDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 80V 100mA 150MHz 350mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 80V 100mA 150MHz 350mW Surface Mount 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-NHUMB10FTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-NHUMB10FTR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-NHUMB10FTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 80V 100mA 150MHz 350mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 80V 100mA 150MHz 350mW Surface Mount 6-TSSOP

Buy Now Datasheet
Rf Transistor, Aec-Q101, Dual Pnp, 80V Rohs Compliant Nexperia - 82AH4889 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor, Aec-Q101, Dual Pnp, 80V Rohs Compliant Nexperia
82AH4889
Rf Transistor, Aec-Q101, Dual Pnp, 80V Rohs Compliant Nexperia 82AH4889
RF TRANSISTOR, AEC-Q101, DUAL PNP, 80V ROHS COMPLIANT: YES

RF TRANSISTOR, AEC-Q101, DUAL PNP, 80V ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - NHUMB10F - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
NHUMB10F
Discrete Semiconductor Products - Transistors - Bipolar (BJT) NHUMB10F
TRANS PREBIAS 2PNP 80V 6TSSOP

TRANS PREBIAS 2PNP 80V 6TSSOP

Supplier's Site

Technical Specifications

  Nexperia B.V. Rochester Electronics DigiKey Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Transistors RF Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number NHUMB10F NHUMB10F 1727-NHUMB10FCT-ND 82AH4889 NHUMB10F
Product Name 80 V, 100 mA PNP/PNP resistor-equipped double transistors Bipolar Transistor Arrays, Pre-Biased Rf Transistor, Aec-Q101, Dual Pnp, 80V Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT363-3 SOT363-3 SOT363 6-TSSOP, SC-88, SOT-363 TO-3 6-TSSOP
Polarity PNP PNP PNP
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Transistor Grade / Operating Range Automotive
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