The IXFX360N10T is an N-channel enhancement mode power MOSFET in a PLUS247 package, designed for high-current switching applications such as synchronous rectification, DC-DC converters, and AC motor drives. It has a drain-source voltage rating of 100 V, a continuous drain current of 360 A at 25°C, and a maximum on-resistance of 2.9 mΩ at 10 V gate-source voltage and 100 A drain current. The device features a fast intrinsic diode, avalanche capability, and a thermal resistance from junction to case of 0.12 °C/W. It is rated for a maximum junction temperature of 175 °C and meets RoHS standards. The package weighs 6 g and supports a mount torque of 20 to 120 N (4.5 to 27 lb.in.).
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFX360N10T |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
