The IXTA4N70X2 is an N-channel enhancement mode power MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a drain tab, weighing 2.50 g. The device has a drain-source breakdown voltage of 700 V, a continuous drain current of 4 A at 25 °C, and a maximum on-resistance of 850 mΩ at 10 V gate-source voltage. It is avalanche rated, with a maximum junction temperature of 150 °C and a thermal resistance from junction to case of 1.56 °C/W. The part meets international standard packaging requirements and features low gate charge and low package inductance.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTA4N70X2 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
