These IXTA130N15X4A devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements. AEC-Q101 Qualified for automotive applications Low on-resistance RDS(ON)and gate charge Qg dv/dt ruggedness Avalanche capability International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTA130N15X4A |
| Product Name | 150V Automotive Qualified Ultra Junction X4-Class Power MOSFETs |
| Package Type | TO-263; TO-263 |
