Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX48N50Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
Request a Quote
Description
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXFX48N50Q is an N-channel enhancement mode Power MOSFET designed for switched-mode and resonant-mode power supplies, DC-DC converters, and motor control applications. It is packaged in a PLUS 247TM case, measuring 21.34 mm in length and 16.13 mm in width. The device is rated for a drain-source voltage of 500 V, continuous drain current of 48 A at 25°C, and a pulsed drain current of 192 A. It has a maximum on-state resistance of 100 mΩ at V_GS = 10 V and T_J = 25°C. The MOSFET is avalanche rated with an unclamped inductive switching energy of 2.5 J and supports a maximum dV/dt of 15 V/ns. Thermal resistance from junction to case is 0.26 K/W. Molding epoxies meet UL 94 V-0 flammability classification. The part satisfies AEC-Q200 and RoHS standards.

Datasheet Summary
Powered by GS/AI

The IXFX48N50Q is an N-channel enhancement mode Power MOSFET designed for switched-mode and resonant-mode power supplies, DC-DC converters, and motor control applications. It is packaged in a PLUS 247TM case, measuring 21.34 mm in length and 16.13 mm in width. The device is rated for a drain-source voltage of 500 V, continuous drain current of 48 A at 25°C, and a pulsed drain current of 192 A. It has a maximum on-state resistance of 100 mΩ at V_GS = 10 V and T_J = 25°C. The MOSFET is avalanche rated with an unclamped inductive switching energy of 2.5 J and supports a maximum dV/dt of 15 V/ns. Thermal resistance from junction to case is 0.26 K/W. Molding epoxies meet UL 94 V-0 flammability classification. The part satisfies AEC-Q200 and RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFX48N50Q - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFX48N50Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX48N50Q
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 48A 500V 0.1ohm MOSFET Transistor
278-IXFX48N50Q
N-Channel 48A 500V 0.1ohm MOSFET Transistor 278-IXFX48N50Q
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Product overview: IXFX48N50Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 48A, 500V, 0.1ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 48A, 500V, 0.1ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX48N50Q can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN Product overview: IXFX48N50Q from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 48A, 500V, 0.1ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 48A, 500V, 0.1ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX48N50Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX48N50Q 278-IXFX48N50Q
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 48A 500V 0.1ohm MOSFET Transistor
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

 - 2EDN8534RXTMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type PG-TSSOP-8
Packing Method Tape Reel; Tape & Reel
View Details
Quad/Dual N-Channel Depletion Mode MOSFET Array/Pair - ALD114913SAL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Depletion; Precision Depletion Mode
V(BR)DSS 10 volts
View Details
3 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2625ALS - 922460-2SK2625ALS - Win Source Electronics
Specs
Polarity N-Channel
TJ 150 C (302 F)
Package Type TO-220; SOT3; TO-220FI(LS)
View Details
N-channel 80 V, 9.9 mΩ standard level MOSFET in LFPAK56 - BUK7Y9R9-80EX - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 80 volts
IDSS 89000 milliamps
View Details
7 suppliers