Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTA48P05T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote
Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXTA48P05T is a P-channel enhancement mode MOSFET rated for -50 V drain-source voltage and -48 A continuous drain current, packaged in a TO-263 case with a weight of 2.50 g. It features a maximum on-resistance of 30 mΩ at -10 V gate-source voltage and 25°C junction temperature, and is avalanche rated with a single-pulse energy rating of 300 mJ. The device includes a fast intrinsic diode and is designed for high-side switching, push-pull amplifiers, DC choppers, and battery charger applications. It meets international standard package specifications and is rated for operation from -55°C to 150°C junction temperature. Thermal resistance from junction to case is 0.83 °C/W. The part is qualified under industry-standard reliability criteria for power semiconductors.

Datasheet Summary
Powered by GS/AI

The IXTA48P05T is a P-channel enhancement mode MOSFET rated for -50 V drain-source voltage and -48 A continuous drain current, packaged in a TO-263 case with a weight of 2.50 g. It features a maximum on-resistance of 30 mΩ at -10 V gate-source voltage and 25°C junction temperature, and is avalanche rated with a single-pulse energy rating of 300 mJ. The device includes a fast intrinsic diode and is designed for high-side switching, push-pull amplifiers, DC choppers, and battery charger applications. It meets international standard package specifications and is rated for operation from -55°C to 150°C junction temperature. Thermal resistance from junction to case is 0.83 °C/W. The part is qualified under industry-standard reliability criteria for power semiconductors.

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTA48P05T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTA48P05T
-50V to -200V P-Channel Power MOSFETs IXTA48P05T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTA48P05T
MOSFET Transistor 278-IXTA48P05T
Power Field-Effect Transistor, Product overview: IXTA48P05T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA48P05T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTA48P05T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA48P05T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA48P05T 278-IXTA48P05T
Product Name -50V to -200V P-Channel Power MOSFETs MOSFET Transistor
Polarity P-Channel
Unlock Full Specs
to access all available technical data