The IXTA50N20P is an N-channel enhancement mode MOSFET rated for 200 V drain-source voltage and 50 A continuous drain current, housed in a TO-263 package weighing 2.5 g. It has a maximum on-resistance of 60 mΩ at 25°C and is avalanche rated with an unclamped inductive switching energy of 1 J. The device supports a peak pulse current of 120 A and operates with a junction temperature range of -55°C to 175°C. Thermal resistance from junction to case is 0.42 °C/W. It meets international standard package requirements and features low package inductance for efficient switching. The part is designed for high power density applications with space-saving benefits.
Polar™ Standard Power MOSFETs are tailored to provide designers with a device solution that offers the best compromise between performance and cost. These devices incorporate the Polar technology platform to achieve low on-state resistances (Rdson). Polar Standard MOSFETs feature low gate charge Qg values, resulting in more efficient switching at all frequencies. This gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components in a variety of load switching designs. The avalanche capabilities of these devices add an additional safeguard against over-voltage transients. Advantages: Easy to mount Space savings High power density International Standard Packages Dynamic dv/dt rating Low RDS(on) and Qg Avalanche Rated Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTA50N20P |
| Product Name | 100V - 1200V N-Channel Standard Power MOSFETs |
| Polarity | N-Channel |
