Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) TO-263AA Product overview: IXTA24N65X2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA24N65X2 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTA24N65X2 | 278-IXTA24N65X2 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode | 650V 24A MOSFET Transistor |
| Polarity | N-Channel | |
| Package Type | TO-263; TO-263 | |
| MOSFET Operating Mode | Enhancement |
