These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXKC25N80C |
| Product Name | 600V - 800V N-Channel Super Junction Power MOSFETs |
| Polarity | N-Channel |
