Littelfuse, Inc. 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTA60N20X4

Description
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature
Datasheet
Description
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature
Datasheet

Suppliers

Company
Product
Description
Supplier Links
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTA60N20X4 - Littelfuse, Inc.
Rosemont, IL, United States
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXTA60N20X4
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTA60N20X4
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature

The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTA60N20X4
Product Name 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

PMIC - PMIC - Gate Drivers - LM5111-3MX/NOPB - 1054841-LM5111-3MX/NOPB - Win Source Electronics
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT3; 8-SOIC
View Details
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
MOSFETs - 1220610 - RS Components, Ltd.
RS Components, Ltd.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT23; Sot-23
View Details
Hard To Find - 2SK1020 - 1126921-2SK1020 - Win Source Electronics
Fuji Electric Corp. of America
Specs
Transistor Type MOSFET; Power-MOSFET
Package Type SOT3
View Details
2 suppliers