Littelfuse, Inc. 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTA60N20X4

Description
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature
Datasheet
Description
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature
Datasheet

Suppliers

Company
Product
Description
Supplier Links
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTA60N20X4 - Littelfuse, Inc.
Rosemont, IL, United States
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXTA60N20X4
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTA60N20X4
The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature

The new 200V X4-Class Ultra Junction MOSFETs are available in 60A nominal current rating and TO-220 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on). This new family exhibits significant reduction in the Figure of Merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density. Low on-state resistance RDS(ON) = 21mΩ Low thermal resistance RthJC = 0.6K/W Low gate charge Qg = 33 nC 175°C operating junction temperature

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTA60N20X4
Product Name 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY - ALD110808PCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP16
View Details
3 suppliers
Single IGBTs - 448-AIKYX200N75CP2ALSA1-ND - DigiKey
Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-247; TO-247-4
Transistor Grade / Operating Range Automotive
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA - 855027-2SA1319S-AA - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
PMIC - PMIC - Gate Drivers - LM5114BMF/NOPB - 119913-LM5114BMF/NOPB - Win Source Electronics
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT3; SOT23; SOT-23-6
View Details
2 suppliers