Littelfuse, Inc. 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFX66N85X

Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
Request a Quote
Datasheet
Datasheet Summary
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The IXFX66N85X is an N-channel enhancement mode power MOSFET rated for 850 V drain-source voltage and 66 A continuous drain current, with a maximum on-state resistance of 65 mΩ at 25°C. It is packaged in a TO-264 case with a drain tab, weighing 10 g, and supports mounting torque of 1.13 Nm. The device is avalanche rated, features a fast intrinsic diode, and has low gate charge and package inductance. It operates with a junction temperature range of -55°C to 150°C and meets the AEC-Q200 automotive quality standard. Thermal resistance from junction to case is 0.10 °C/W.

Datasheet Summary
Powered by GS/AI

The IXFX66N85X is an N-channel enhancement mode power MOSFET rated for 850 V drain-source voltage and 66 A continuous drain current, with a maximum on-state resistance of 65 mΩ at 25°C. It is packaged in a TO-264 case with a drain tab, weighing 10 g, and supports mounting torque of 1.13 Nm. The device is avalanche rated, features a fast intrinsic diode, and has low gate charge and package inductance. It operates with a junction temperature range of -55°C to 150°C and meets the AEC-Q200 automotive quality standard. Thermal resistance from junction to case is 0.10 °C/W.

Suppliers

Company
Product
Description
Supplier Links
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFX66N85X - Littelfuse, Inc.
Rosemont, IL, United States
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFX66N85X
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFX66N85X
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFX66N85X
MOSFET Transistor 278-IXFX66N85X
Power Field-Effect Transistor, Product overview: IXFX66N85X from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX66N85X can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFX66N85X from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX66N85X can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX66N85X 278-IXFX66N85X
Product Name 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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