Littelfuse, Inc. -50V to -200V P-Channel Power MOSFETs IXTA28P065T

Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote Datasheet
Description
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
-50V to -200V P-Channel Power MOSFETs - IXTA28P065T - Littelfuse, Inc.
Rosemont, IL, United States
-50V to -200V P-Channel Power MOSFETs
IXTA28P065T
-50V to -200V P-Channel Power MOSFETs IXTA28P065T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTA28P065T
MOSFET Transistor 278-IXTA28P065T
Power Field-Effect Transistor, Product overview: IXTA28P065T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA28P065T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTA28P065T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA28P065T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA28P065T 278-IXTA28P065T
Product Name -50V to -200V P-Channel Power MOSFETs MOSFET Transistor
Polarity P-Channel
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1460595 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
Package Type Sot-363 (sc-88)
View Details
CSD17556Q5B 30V N-Channel NexFET Power MOSFETs - CSD17556Q5B - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 30 volts
rDS(on) 0.0018 ohms
View Details
8 suppliers
55 V, N-channel Trench MOSFET - 2N7002NXAKR - Nexperia B.V.
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 300000 milliamps
View Details
9 suppliers