Littelfuse, Inc. 100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTA08N50D2

Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Description
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)
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Datasheet
Datasheet Summary
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The IXTA08N50D2 is a depletion-mode N-channel MOSFET designed for normally-on operation in applications such as audio amplifiers, start-up circuits, and protection circuits. It is offered in a TO-263 package and has a maximum drain-source voltage rating of 500 V, with a continuous drain current of 800 mA and on-state resistance of 4.6 Ω at 25°C. The device features a gate-source threshold voltage range of -2.5 V to -4.5 V, and is rated for junction temperatures from -55°C to +150°C. Molding epoxies meet UL 94 V-0 flammability classification. Transient gate-source voltage withstand is ±30 V, and the maximum lead temperature for soldering is 260°C for 10 seconds. Thermal resistance from junction to case is 0.50°C/W for the TO-263 package. The device complies with international standard packages and supports space-saving, high-power-density designs.

Datasheet Summary
Powered by GS/AI

The IXTA08N50D2 is a depletion-mode N-channel MOSFET designed for normally-on operation in applications such as audio amplifiers, start-up circuits, and protection circuits. It is offered in a TO-263 package and has a maximum drain-source voltage rating of 500 V, with a continuous drain current of 800 mA and on-state resistance of 4.6 Ω at 25°C. The device features a gate-source threshold voltage range of -2.5 V to -4.5 V, and is rated for junction temperatures from -55°C to +150°C. Molding epoxies meet UL 94 V-0 flammability classification. Transient gate-source voltage withstand is ±30 V, and the maximum lead temperature for soldering is 260°C for 10 seconds. Thermal resistance from junction to case is 0.50°C/W for the TO-263 package. The device complies with international standard packages and supports space-saving, high-power-density designs.

Suppliers

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Product
Description
Supplier Links
100V - 1700V N-Channel Depletion Mode Power MOSFETs - IXTA08N50D2 - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1700V N-Channel Depletion Mode Power MOSFETs
IXTA08N50D2
100V - 1700V N-Channel Depletion Mode Power MOSFETs IXTA08N50D2
As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power dissipation in systems that are continuously “on” (emergency or burglar alarms, for instance). Normally on operation Linear mode tolerant Low RDS(on) Useable body diode Internal standard packages UL 94 V-0 Flammability qualified (molding epoxies)

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTA08N50D2
MOSFET Transistor 278-IXTA08N50D2
Power Field-Effect Transistor, Product overview: IXTA08N50D2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA08N50D2 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTA08N50D2 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA08N50D2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA08N50D2 278-IXTA08N50D2
Product Name 100V - 1700V N-Channel Depletion Mode Power MOSFETs MOSFET Transistor
Polarity N-Channel
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