Littelfuse, Inc. Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen1 - IXTA76N075T IXTA76N075T

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier