The IXFX38N80Q2 is an N-channel enhancement mode power MOSFET in the PLUS247 package, rated for 800V drain-source voltage and 38A continuous drain current at 25°C, with a maximum on-resistance of 220mΩ at 10V gate-source voltage. It is avalanche-rated, features a fast intrinsic rectifier, and has a gate charge of 44nC. The device meets UL 94 V-0 flammability standards and is designed for high power density applications with low package inductance. The plastic body is rated to 260°C for 10 seconds, and the junction temperature ranges from -55°C to 150°C. Mounting force for the PLUS247 package is 20 to 120 N (4.5 to 27 lbf).
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFX38N80Q2 |
| Product Name | 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
