N-Channel enhancement mode MOSFET for high current switching in automotive and power systems, housed in a TO-263 (7-lead) package with 1.6 mm distance from case to lead. Rated for 75 V drain-source breakdown voltage, 160 A continuous drain current at 25°C, and 175°C junction temperature. On-resistance is 4.8 to 6.0 mΩ at 10 V gate voltage and 25 A drain current. Features avalanche rating, 750 mJ unclamped inductive switching energy, and thermal resistance of 0.42°C/W from junction to case. Source-drain diode forward voltage is 1.0 V at 25 A. Package has low inductance and supports high dv/dt Operation up to 3 V/ns.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTA160N075T7 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Trench Gate - Series: Gen1 - IXTA160N075T7 |
| Polarity | N-Channel |
