The IXKF40N60SCD1 is a 600 V N-channel CoolMOS™ power MOSFET with an integrated series Schottky diode and ultra-fast antiparallel diode in an ISOPLUS i4-PAC™ package. It has a maximum drain current of 41 A at 25°C and a typical on-state resistance of 60 mΩ at 25°C. The device features a fast reverse recovery time of 70 ns, an isolated back surface, and an enlarged creepage distance for high-voltage safety. It meets UL 94 V-0 flammability rating and is UL registered E72873. The thermal resistance from junction to case is 0.45 K/W for the MOSFET and 2.2 K/W for the series Schottky diode. The package dimensions are 21.34 mm in length and 20.29 mm in width. Operation temperature range is -40°C to +150°C.
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXKF40N60SCD1 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Super Junction - Series: C3-Class - IXKF40N60SCD1 |
| Polarity | N-Channel |
