Littelfuse, Inc. 600V N-Channel Super Junction Power MOSFETs IXKH70N60C5

Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density Low thermal resistance
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Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density Low thermal resistance
Request a Quote
Datasheet
Datasheet Summary
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The IXKH70N60C5 is a 600 V N-channel enhancement mode MOSFET designed for switched mode power supplies, uninterruptible power supplies, power factor correction, welding, and inductive heating. It comes in a TO-247 AD package with dimensions of 20.79 to 21.45 mm in length and 15.48 to 16.24 mm in width. The device has a maximum on-state resistance of 45 mΩ at 25 °C, a continuous drain current of 70 A at 25 °C, and an avalanche energy rating of 1950 mJ. It features a gate charge of up to 190 nC and a thermal resistance from junction to case of 0.2 K/W. The operating junction temperature range is from -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

The IXKH70N60C5 is a 600 V N-channel enhancement mode MOSFET designed for switched mode power supplies, uninterruptible power supplies, power factor correction, welding, and inductive heating. It comes in a TO-247 AD package with dimensions of 20.79 to 21.45 mm in length and 15.48 to 16.24 mm in width. The device has a maximum on-state resistance of 45 mΩ at 25 °C, a continuous drain current of 70 A at 25 °C, and an avalanche energy rating of 1950 mJ. It features a gate charge of up to 190 nC and a thermal resistance from junction to case of 0.2 K/W. The operating junction temperature range is from -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
600V N-Channel Super Junction Power MOSFETs - IXKH70N60C5 - Littelfuse, Inc.
Rosemont, IL, United States
600V N-Channel Super Junction Power MOSFETs
IXKH70N60C5
600V N-Channel Super Junction Power MOSFETs IXKH70N60C5
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density Low thermal resistance

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density Low thermal resistance

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXKH70N60C5
MOSFET Transistor 278-IXKH70N60C5
Power Field-Effect Transistor, Product overview: IXKH70N60C5 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXKH70N60C5 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXKH70N60C5 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXKH70N60C5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXKH70N60C5 278-IXKH70N60C5
Product Name 600V N-Channel Super Junction Power MOSFETs MOSFET Transistor
Polarity N-Channel
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