Littelfuse, Inc. 600V - 800V N-Channel Super Junction Power MOSFETs IXKN40N60C

Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
Datasheet
Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
Datasheet

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600V - 800V N-Channel Super Junction Power MOSFETs - IXKN40N60C - Littelfuse, Inc.
Rosemont, IL, United States
600V - 800V N-Channel Super Junction Power MOSFETs
IXKN40N60C
600V - 800V N-Channel Super Junction Power MOSFETs IXKN40N60C
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXKN40N60C
Product Name 600V - 800V N-Channel Super Junction Power MOSFETs
Polarity N-Channel
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