Littelfuse, Inc. 600V - 800V N-Channel Super Junction Power MOSFETs IXKN40N60C

Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
Datasheet
Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance
Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V - 800V N-Channel Super Junction Power MOSFETs - IXKN40N60C - Littelfuse, Inc.
Rosemont, IL, United States
600V - 800V N-Channel Super Junction Power MOSFETs
IXKN40N60C
600V - 800V N-Channel Super Junction Power MOSFETs IXKN40N60C
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate 3rd generation CoolMOS™(1) power MOSFET Enhanced total power density Low thermal resistance

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXKN40N60C
Product Name 600V - 800V N-Channel Super Junction Power MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

45 V, 500 mA NPN general-purpose transistors - BC817,215 - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
8 suppliers
Bipolar Transistors - 1219415 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT23; Sot-23
View Details